FDMS8690 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

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* Max rDS(on) = 9.0mΩ at VGS = 10V, ID = 19.8A Max rDS(on) = 12.5mΩ at VGS = 4.5V, ID = 11.5A High performance trench technology for extremely.

Application

* High Efficiency DC-DC Converters
* Notebook Vcore Power Supply
* Multi purpose Point of Load PIN 1 S S .

Description

This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resi.

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